BSX51 / 10mA, 15V, NPN

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 25

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.02

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF: 8

Forward current transfer ratio (hFE), min: 75

Noise Figure, dB: -

Package of BSX51 transistor: TO18