2SB1099 / 8A, 100V, PNP Drl . SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIER (Orijinal)

Type Designator: 2SB1099

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 25

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 8

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 6000

Noise Figure, dB: -

Package of 2SB1099 transistor: TO220